Toward a Better Understanding of Ni-Based Ohmic Contacts on SiC

Characterization of Pd/Ni/Au ohmic contacts on p-GaN

A low-resistance ohmic contact to Mg-doped p-type GaN grown by metal-organic chemical vapor deposition (MOCVD) with a carrier concentration of 2 · 10 cm 3 using Pd/Ni/Au metallization was formed. An anneal at 500 C for 1 min in a flowing N2 ambient produced an excellent ohmic contact with a specific contact resistivity as low as 2.4 · 10 5 X cm. X-ray photoelectron spectroscopy (XPS) and Auger ...

Single-step synthesis process of Ti3SiC2 ohmic contacts on 4H-SiC by sputter-deposition of Ti

Ohmic contacts on sputtered a-Si : H

2014 We show that ohmic contacts can be obtained by hydrogen depletion in a-Si : H. We obtain these ohmic contacts by diffusion of hydrogen into adjacent films of pure a-Si at 190 °C or Pd at room temperature. J. Phrsigcue LETTRES 41 (19RO) L-27 L-29 15 JANVIER 1980, Classification Physics Abstracts 73.40N Following the work of the Dundee [1] and R.C.A. [2] groups, several laboratories have tri...

Nanoscale electro-structural characterisation of ohmic contacts formed on p-type implanted 4H-SiC

This work reports a nanoscale electro-structural characterisation of Ti/Al ohmic contacts formed on p-type Al-implanted silicon carbide (4H-SiC). The morphological and the electrical properties of the Al-implanted layer, annealed at 1700°C with or without a protective capping layer, and of the ohmic contacts were studied using atomic force microscopy [AFM], transmission line model measurements ...

Toward a Better Understanding of Leaderboard

The leaderboard in machine learning competitions is a tool to show the performance of various participants and to compare them. However, the leaderboard quickly becomes no longer accurate, due to hack or overfitting. This article gives two advices to avoid this. It also points out that the Ladder leaderboard successfully prevents this with Õ( −3) samples in the validation set.